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Ordering number : EN*A1476
Thick-Film Hybrid IC
STK433-760-E
Overview
2-channel class AB audio power IC, 50W+50W
The STK433-760-E is a hybrid IC designed to be used in 50W x 50W (2-channel) class AB audio power amplifiers.
Applications
* Audio power amplifiers.
Features
* Miniature package (47.0mm x 25.6mm x 9.0mm) * Output load impedance: RL = 6 to 4 supported * Built-in stand-by circuit, output limiting circuit for substrate overheating, and load short-circuit protection
circuit constituted by monolithic ICs
Series Models
STK433-730-E Output 1 (10%/1kHz) Output 2 (0.4%/20Hz to 20kHz) Max. rated VCC (quiescent) Max. rated VCC (6) Max. rated VCC (4) Recommended operating VCC (4) Dimensions (excluding pin height) 30Wx2 channels 15Wx2 channels 30V 28V 25V 18V 47.0mmx25.6mmx9.0mm STK433-760-E 50Wx2 channels 35Wx2 channels 50V 40V 33V 23V
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
52709HKIM No. A1476-1/12
STK433-760-E
Specifications
Absolute Maximum Ratings at Ta = 25C, Tc=25C unless otherwise specified
Parameter Maximum supply voltage Symbol VCC max (0) VCC max (1) VCC max (2) Minimum operating supply voltage Stand-by pin maximum voltage Output current Thermal resistance VCC min VST max IO (peak) j-c 1ch, ton=25ms Per power transistor Per package Junction temperature IC substrate operating temperature Storage temperature Tj max Tc max Tstg Both the Tj max and Tc max conditions must be met. Conditions Stand-by ON or When no signal (Stand-by OFF) When signals are present, RL6 When signals are present, RL4 (*1) (*1) Ratings 50 40 33 10 -0.3 to +5.5 5.0 3.5 0.88 150 125 -30 to +125 Unit V V V V V A C/W C C C
Operating Characteristics at Tc=25C, RL=4, Rg=600, VG=30dB, non-inductive load RL, using constantvoltage power supply and specification test circuit, unless otherwise specified
Conditions *2 Parameter Output power *2 Symbol PO (1) PO (2) PO (3) Total harmonic distortion *2 THD (1) THD (2) Output power transistor saturation voltage Frequency characteristics *2 Input impedance Output noise voltage Quiescent current Output neutral voltage Pin 13 voltage when standby ON OFF Pin 10 (latch operation detection pin) voltage Substrate thermal protection *8 Overcurrent protection *8,*10 IO (peak) *7 TD 23 23 1k 1k *5 VST OFF IM ON *5 Pin 13 voltage when standby *10 fL, fH ri VNO ICCO VN VST ON Vsat VCC (V) 23 23 23 23 23 23 23 23 28 28 28 23 23 Standby Operating In short-circuit protection mode RL= 2.5 3.6 5.5 130 6.0 1k f (Hz) 20 to 20k 1k 1k 20 to 20k 1k 1k 50 1.0 1.0 Rg=2.2k No loading 15 -70 30 0 10 +0 -3dB 5.0 PO (W) THD (%) 0.4 0.4 10 VG=30dB 0.04 5.0 20 to 50k 55 1.0 60 +70 0.6 5.5 V Hz k mVrms mA mV V V V C A min 33 Ratings unit typ 35 40 50 0.4 % W max
No. A1476-2/12
STK433-760-E
[Remarks] *1: Maximum ratings are limits beyond which damage to the device may occur. Exceeding the maximum ratings, even momentarily, may cause damage to the hybrid IC. In SANYO Semiconductor's test processes, operation at the maximum supply voltage is checked. (Test conditions) VCC max (2)=33V, RL=4, f=1kHz, Po=35W, 1ch Drive, ton=25ms, Tc=25C *2: For 1-channel operation *3: -Pre VCC (pin 7) must be connected to the lowest stable potential to prevent the current flowing into the pin 1 due to reverse bias, etc. *4: Thermal design must be implemented based on the conditions under which the customer's end products are expected to operate on the market. *5: Use the hybrid IC so that the voltage applied to the stand-by pin (pin 13) never exceeds the maximum rating. The power amplifier is turned on by applying +2.5V to +5.5V to the stand-by pin (pin 13). *6: An output limiting circuit for H-IC overheating is incorporated to protect the hybrid IC from the heat generation exceeding the maximum rating. Thermal design must be implemented from the maximum loss Pd max and "Pd-Tc" derating curve based on the conditions under which the customer's end products are expected to operate on the market. When deviating from the "Pd-Tc" derating curve, the desired output is not obtained, but the prescribed output is generated again by reducing H-IC temperature to within the recommended operating region. *7: The load short-circuit protection is designed based on the specification test condition. The load short-circuit protection circuit is activated when it has detected an overcurrent in the output transistors. So if any deviation from the "Pd-Tc" derating curve occurs, the protection circuit is activated and the circuit shuts down in order to protect the output transistors. When the load short-circuit protection circuit has been activated and the circuit shuts down, approximately +5.5V of voltage will be placed at the MONITOR pin (pin 10) (normally 0V). The protection circuit operation is released by establishing the stand-by mode (pin 13: 0V). *8: The substrate temperature protection rating is the design guarantee value using the specification test circuit of SANYO Semiconductor. The output limiting circuit for H-IC overheating (*6) and the load short-circuit protection circuit (*7) are the only protection functions incorporated. The thermal design and overcurrent protection level must be verified based on the conditions under which the customer's end products are expected to operate on the market. *9: A thermoplastic adhesive resin is used to secure the case and aluminum substrate. For this reason, the hybrid IC must be fixed to the heat sink before soldering and mounted. The heat sink must be installed or removed at room temperature. *10: Use the designated transformer power supply circuit shown in the figure below for the measurement of allowable load shorted time and output noise voltage level. *11: Weight of independent hybrid IC: 12.2g Outer box dimensions: 452(D) x 325(W) x 192(H) mm
DBA40C
10000F + +VCC 500 + 500 -VCC 10000F
Designated transformer power supply (MG-200 equivalent)
No. A1476-3/12
STK433-760-E
120
Pc - Tc
160 140
Pd - Tc
2-ch drive (same output rating)
Power Transistor Dissipation, Pc - W
100
Power Dissipation, Pd - W
0 50 100 150
ITF02668
120 100 80 60 40 20
80
60
40
20
0
0 0 50 100 150
ITF02669
Operating Substrate Temperature, Tc - C
Operating Substrate Temperature, Tc - C
Package Dimensions
unit:mm (typ)
47.0 41.2 (R1.8) 9.0
12.8
25.6
5.0
1 3.6 2.0 (6.6) 14 2.0=28.0
15
17.6
4.0
0.4 2.9 5.5
0.5
No. A1476-4/12
STK433-760-E
Internal Equivalent Circuit
+VCC 3 +Pre VCC 8
Pre Driver CH1 IN ch1 11 NF ch1 12 + -
Pre Driver CH2 15 IN ch2 14 NF ch2
+ -
Stand-by Circuit -Pre VCC 1 - VCC 2 ch1- 5 4 6 7 ch2ch1+ ch2+ SUB 9 GND 10 Monitor 13 St-By
Application Circuit Example
STK433-760-E
GND/ -Pre -VCC +VCC Ch1+ Ch1- Ch2+ Ch2- +Pre SUB Monitor IN/1 NF/1 St-by NF/2 IN/2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15 R3 Stand-by Control
R02 R01 +VCC C01 GND C02 -VCC C14 C04 C03 R16
(C5) (R4) C27 Detection Terminal R27 R28 C28
R15 R23 C13 L12 R11 R13 C11 L11 C12 R12 R14 R25 C25 C26 C21 GND R26 GND C22 Ch2 IN GND Ch1 OUT Ch2 OUT C24 R22 R24 C23 R21 Ch1 IN
No. A1476-5/12
STK433-760-E
Recommended Values for Application Parts (for the test circuit)
Symbol R01, R02 Recommen ded Value 100 Description Ripple filtering resistors (Fusible resistors are desirable) (Used with C03, C04 to form a ripple filter.) R03 (R04) R11, 12 R13, 14 R15, 16 R21, 22 R23, 24 R25, 26 R27, 28 C01, 02 about 10k 4.7 4.7/1W 56k 1k 1.8k 56k 560 100F Larger than Recommended Value Decreased passthrough current at high frequencies. rating. Pull down resistance (at detection terminal use). Noise-absorbing resistors Oscillation prevention Used with R23 and R24 to determine the voltage gain VG. Input filtering resistor Used with R15 and R16 to determine the voltage gain VG. (VG should desirably be determined by the R23 and R24 value.) Input bias resistors (Virtually determine the input impedance.) Oscillation prevention Oscillation prevention * Insert the capacitors as close to the IC as possible to decrease the power impedance for reliable IC operation (use of electrolytic capacitors are desirable). C03, C04 100F Decoupling capacitors. * Eliminate ripple components that pass into the input side from the power line. (Used with R01, R02 to form a filter.) (C05) C11, 12 C13, 14 C21, 22 About 0.1F 0.1F 15pF 470pF A constant is adjusted when detection voltage appears at the time of latch rise (at detection terminal use). Oscillation prevention (Mylar capacitors are recommended.) Oscillation prevention Input filter capacitor (Used with R21 and R22 to form a filter that suppresses highfrequency noises.) C23, 24 C25, 26 2.2F 10F Input coupling capacitor (block DC current) NF capacitor (Changes the low cutoff frequency; fL=1/ (2 * C25 * R23) Increase in lowfrequency voltage gain, with higher pop noise at power-on. C27, 28 L11, 12 120pF 1H Oscillation prevention Oscillation prevention Likely to oscillate None Likely to oscillate Decrease in lowfrequency voltage gain Likely to oscillate Likely to oscillate Increase in ripple components that pass into the input side from the power line. VN offset (Ensure R15=R25, R16=R26 when changing.) Likely to oscillate (VG<30dB) Likely to oscillate None (VG42dB) (min) 5.1k Smaller than Recommended Value Increased passthrough current at high frequencies.
Use a limiting resistor according to the stand-by control voltage in order to control the stand-by pin voltage VST within the
No. A1476-6/12
STK433-760-E
Sample PCB Trace Pattern
C04
Cut pattern of #10pin
R04 C05 * Additional parts are indicated by CIRCUIT Location No.
No. A1476-7/12
STK433-760-E
STK433-760-E TEST Board PARTS LIST
STK403-000sr/100sr/200sr PCB
PCB Location No. R01 R02,R03 R05, R06, R08, R09 R11, R12 R14, R15 R17, R18 R20, R21 R34, R35 C01, C02, C03 C05, C06 C07, C08 C10, C11 C13, C14 C16, C17 C19, C20 L01, L02 Stand-By Control Circuit Tr1 D1 R03 R31 R32 R33 C32 J1, J2, J3, J4, J5, J6, J8, J9 JS6 JS1 R02 ERG1SJ101 R27, R28 R04 C05 C01, C02, C03, C04 C23, C24 C21, C22 C13, C14 C25, C26 C11, C12 C27, C28 L11, L12 R01 R21, R22 R15, R16, R25, R26 R23, R24 R11, R12 R13, R14 CIRCUIT Location No. PARTS ERG1SJ101 RN16S102FK RN16S563FK RN16S182FK RN14S4R7FK ERX1SJ4R7 RN16S561FK RN16S103FK ECQ-V1H104JZ 100MV100HC 50MV2R2HC DD104-63B471K50 DD104-63CJ150C50 10MV10HC ECQ-V1H104JZ DD104-63B121K50 2SC2274 (Reference) RN16S133FK RN16S333FK RN16S202FK 10MV33HC 100, 1W 2k, 1/6W 33F, 10V Jumper Jumper 13k, 1/6W 33k, 1/6W 560, 1/6W 10k, 1/6W 0.1F, 50V 100F, 100V 2.2F, 50V 470pF, 50V 15pF, 50V 10F, 10V 0.1F, 50V 120pF, 50V 1H VCE50V, IC10mA (*) (*) 100,1W 1k, 1/6W 56k, 1/6W 1.8k, 1/6W 4.7, 1/4W 4.7, 1W short RATING STK433-760-E
* (*) Capacitor mark "A" side is "-" (negative). * R04, C04 and C05 does not have a location number on the PCB so the component must be mounted on the reverse side of the board.
No. A1476-8/12
STK433-760-E
Pin Assignments
[STK433-730-E/-760-E Pin Layout]
1 (Size) 47.0mmx25.6mmx9.0mm STK433-730-E 30Wx2ch/JEITA STK433-760-E 50Wx2ch/JEITA P R E V C C + V C C O U T / C H 1 + O U T / C H 1 O U T / C H 2 + 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 2ch classAB/2.00mm O U T / C H 2 + P R E S U B / G N D M O N I T O R I N / C H 1 N F / C H 1 S T A N D | B Y N F / C H 2 I N / C H 2
Evaluation Board Characteristics
100 7 5 3 2
THD - PO
Total power dissipation on PCB, Pd - W
Total Harmonic Distortion, THD - %
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0.1
VCC=23V RL=4 2ch Drive VG=30dB Rg=600 Tc=25C
f=20 kHz
100 90 80 70 60 50 40 30 20 10 0 0.1 2 3 5 7 1.0
Pd - PO
VCC=23V RL=4 2ch Drive f=1kHz VG=30dB Rg=600 Tc=25C
f=1 kHz
2
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100
ITF02670
2
3
5 7 10
2
3
5 7 100
ITF02671
Output Power, PO/ch - W
100 90 80
Output Power, PO/ch - W
80 70
PO - VCC
PO - f
Output Power, PO/ch - W
Output Power, PO/ch - W
70 60 50 40 30 20 10
RL=4 2ch Drive VG=30dB Rg=600 Tc=25C
1 ( f=
60 50
THD=10% THD=0.4%
z) kH
=1 .4% z) H D =0 T 0kH HD =2 f T %( 0.4 D= TH
0%
1 (f=
z) kH
40 30 20 10 0 10
0 10
VCC=23V RL=4 2ch Drive VG=30dB Rg=600 Tc=25C
23 5 7 100 23 5 7 1k 23 5 7 10k 23 5 7100k
ITF02673
15
20
25
30
35
ITF02672
Supply Voltage, VCC - V
Frequency, f - Hz
No. A1476-9/12
STK433-760-E
[Thermal Design Example for STK433-760-E (RL = 4)] The thermal resistance, c-a, of the heat sink for total power dissipation, Pd, within the hybrid IC is determined as follows. Condition 1: The hybrid IC substrate temperature, Tc, must not exceed 125C. Pd x c-a + Ta < 125C ................................................................................................. (1) Ta: Guaranteed ambient temperature for the end product Condition 2: The junction temperature, Tj, of each power transistor must not exceed 150C. Pd x c-a + Pd/N x j-c + Ta < 150C .......................................................................... (2) N: Number of power transistors j-c: Thermal resistance per power transistor However, the power dissipation, Pd, for the power transistors shall be allocated equally among the number of power transistors. The following inequalities result from solving equations (1) and (2) for c-a. c-a < (125 - Ta)/Pd ...................................................................................................... (1)' c-a < (150 - Ta)/Pd - j-c/N ........................................................................................ (2)' Values that satisfy these two inequalities at the same time represent the required heat sink thermal resistance. When the following specifications have been stipulated, the required heat sink thermal resistance can be determined from formulas (1)' and (2)' . * Supply voltage VCC * Load resistance RL * Guaranteed ambient temperature Ta [Example] When the IC supply voltage, VCC, is 23V and RL is 4, the total power dissipation, Pd, within the hybrid IC, will be a maximum of 52W at 1kHz for a continuous sine wave signal according to the Pd-PO characteristics. For the music signals normally handled by audio amplifiers, a value of 1/8PO max is generally used for Pd as an estimate of the power dissipation based on the type of continuous signal. (Note that the factor used may differ depending on the safety standard used.) This is: Pd = 38.0W (when 1/8PO max. = 6.25W).
The number of power transistors in audio amplifier block of these hybrid ICs, N, is 4, and the thermal resistance per transistor, j-c, is 3.5C/W. Therefore, the required heat sink thermal resistance for a guranteed ambient temperature, Ta, of 50C will be as follows. From formula (1)' c-a < (125 - 50)/38.0 < 1.92 From formula (2)' c-a < (150 - 50)38.0 - 3.5/4 < 1.75 Therefore, the value of 1.75C/W, which satisfies both of these formulae, is the required thermal resistance of the heat sink. Note that this thermal design example assumes the use of a constant-voltage power supply, and is therefore not a verified design for any particular user's end product.
No. A1476-10/12
STK433-760-E
STK433-760-E Stand-by Control & Mute Control Application STK433-760-E
VST Ch1 -PRE -VCC +VCC OUT Ch1 OUT SUB/ Ch2 Ch2 Ch1 OUT OUT +PRE GND MONITOR IN Ch1 Ch2 NF ST-BY NF Ch2 IN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
TR1 R31 R03 C32 R33 Stand-by Control(ex) H: Operation Mode(+5V) L: Stand-by Mode(0V)
Ch2 IN 10k 10k 10k (0.1F) +VCC MONITOR (10k) 2.2k Ch2 OUT GND GND GND -VCC Ch1 OUT Mute Control +5V Stand-by Control +5V Mute Control H: Single Mute L: Normal GND Ch1 IN
MUTE ST-BY PLAY MUTE ST-BY
[The example of use STK433-*00series Stand-by control circuit] Features * By using the recommended stand-by control application, the pop noise level when the power is turned on/off can be significantly reduced. * By adjusting the limiting resistance (*2) in accordance with the voltages of the microcontroller and other components used, it is possible to perform stand-by control, facilitating the finished product design effort. (ex) STK433-*00series test circuit. When impressed by Stand-by control control [+5V].
Stand-by control circuit part H: Operation mode (+5V) L: Stand-by mode (0V)
VST 1k (*1) VBE
33k
33F (min) (*3)
2k (*4)
1
-PRE
2
-VCC
3
+VCC
4
Ch1 OUT
5
Ch1 OUT
6
Ch2 OUT
7
8
9
10
11
12
13
14
Ch2 NF 4.3k (*2)
15
Ch2 IN
Ch2 +PRE SUB/ MONITOR Ch1 OUT IN GND
Ch1 ST-BY NF
ex) VST=(Stand-by Control-VBE*2)x (*2)/((*1)+(*2))+VBE =(5V-0.6V*2)x4.3k/(4.3k+1k)+0.6V 3.68(V)
VBE
STK433-*00series
Operation Explanation
Stand-by Circuit in Pre Driver IC
1) About VST (#13pin Stand-by Threshold) <1> Operation Mode When pin 13 reference voltage VST is equal to or greater than 2.5V, the stand-by circuit is set off, and the amplifier is set to the operation mode. <2> Stand-by Mode When pin 13 reference voltage VST is equal to or less than 0.6V, the stand-by circuit is set off, and the amplifier is set to the stand-by mode. (*3) The pop noise that occurs when the power is turned ON is reduced by providing a time constant using a capacitor during operation. (*4) The pop noise level is reduced by discharging the capacitor with a resistor in the stand-by mode.
No. A1476-11/12
STK433-760-E
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of May, 2009. Specifications and information herein are subject to change without notice.
PS No. A1476-12/12

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